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J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111 J112 J113
PRODUCT SUMMARY
Part Number
J/SST111 J/SST112 J/SST113
SST111 SST112 SST113
VGS(off) (V)
-3 to -10 -1 to -5 v-3
rDS(on) Max (W)
30 50 100
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
FEATURES
D D D D D Low On-Resistance: 111 < 30 W Fast Switching--tON: 4 ns Low Leakage: 5 pA Low Capacitance: 3 pF Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering
APPLICATIONS
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information).
TO-226AA (TO-92)
D 1 D 1 3 S 2 S 2 G
For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets.
TO-236 (SOT-23)
G
3 Top View Top View J111 J112 J113 SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C For applications information see AN105. Document Number: 70232 S-04028--Rev. E, 04-Jun-01 www.vishay.com Power Dissipationa (TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW (TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW Notes a. Derate 2.8 mW/_C above 25_C
7-1
J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111 J/SST112 J/SST113
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F)
IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 15 V, ID = 10 mA VDS = 5 V, VGS = -10 V TA = 125_C VGS = 0 V, VDS = 0.1 V IG = 1 mA , VDS = 0 V
-55
-35 -3 20 -10
-35 -1 5 -1 -1 -5
-35 V -3 2 -1 nA pA mA
-0.005 -3 -5 0.005 3
1
1
1 nA
30 0.7
50
100
W V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDS = 20 V, ID = 1 mA f = 1 kHz 6 25 30 7 3 3 12 5 50 12 5 100 12 pF 5 nV Hz mS mS W
VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = -10 V f = 1 MHz
VDG = 10 V, ID = 1 mA f = 1 kHz
Switching
td(on) Turn-On Time tr td(off) tf VDD = 10 V, VGS(H) = 0 V See Switching Circuit 2 2 ns 6 15
Turn-Off Time
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
NCB
www.vishay.com
7-2
Document Number: 70232 S-04028--Rev. E, 04-Jun-01
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
100 rDS(on) - Drain-Source On-Resistance ( ) 200 rDS(on) - Drain-Source On-Resistance ( ) 100 IDSS - Saturation Drain Current (mA)
On-Resistance vs. Drain Current
TA = 25 C
rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0
80 IDSS 120 160
80 VGS(off) = -2 V 60
60
rDS
40
80
40
-4 V -8 V
20
40
20
0 0 -2 -4 -6 -8 -10
0
0 1 10 ID - Drain Current (mA) 100
VGS(off) - Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200 rDS(on) - Drain-Source On-Resistance ( ) ID = 1 mA rDS changes X 0.7%/_C 160 4 Switching Time (ns) 5
Turn-On Switching
tr approximately independent of ID VDD = 5 V, RG = 50 VGS(L) = -10 V tr
120
VGS(off) = -2 V
3 td(on) @ ID = 12 mA 2
80
-4 V -8 V
40
1
td(on) @ ID = 3 mA
0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature ( _C)
0 0 -2 -4 -6 -8 -10
VGS(off) - Gate-Source Cutoff Voltage (V)
Turn-Off Switching
30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V 24 Switching Time (ns) Capacitance (pF) 24 30
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
tf @ VGS(off) = -2 V
18
12 td(off) 6 tf @ VGS(off) = -8 V 0 0 2 4 6 8 10 ID - Drain Current (mA)
12 Ciss @ VDS = 0 V 6 Crss @ VDS = 0 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) www.vishay.com
Document Number: 70232 S-04028--Rev. E, 04-Jun-01
7-3
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100 VDS = 10 V gfs - Forward Transconductance (mS) Hz 40 gfs 30
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
50 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz 500
g os - Output Conductance (mS)
en - Noise Voltage nV /
gos 250
10 ID = 1 mA
20
ID = 10 mA
10
1 10 100 1k f - Frequency (Hz) 10 k 100 k
0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V)
0
Gate Leakage Current
10 nA ID = 10 mA IGSS @ 125_C TA = 125_C 100
Common-Gate Input Admittance
VDG = 10 V ID = 10 mA TA = 25_C
1 nA
gig
1 mA - Gate Leakage 100 pA (mS) 1 mA 10 pA TA = 25_C 1 pA 10 mA
10 big
IGSS @ 25_C
1
I G
0.1 pA 0 6 12 18 24 30
0.1 100 200 500 1000
VDG - Drain-Gate Voltage (V)
f - Frequency (MHz)
Common-Gate Forward Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C -gfg 10 (mS) (mS) gfg bfg 1.0 10
Common-Gate Reverse Admittance
VDG = 10 V ID = 10 mA TA = 25_C -brg
+grg -grg 0.1
1
0.1 100 200 500 1000 f - Frequency (MHz) www.vishay.com
0.01 100 200 500 f - Frequency (MHz) Document Number: 70232 S-04028--Rev. E, 04-Jun-01 1000
7-4
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C ID - Drain Current (mA) bog 10 (mS) 100
Output Characteristics
VGS(off) = -4 V
80
60
VGS = 0 V -0.5
gog 1
40
-1.0 -1.5
20
-2.0 -2.5
0.1 100 200 500 1000
0 0 2 4 6 8 10
f - Frequency (MHz)
VDS - Drain-Source Voltage (V)
Output Characteristics
40 VGS(off) = -4 V 32 ID - Drain Current (mA) VGS = 0 V 24 -0.5 -1.0 16 -1.5 -2.0 8 -2.5 -3.0 0 0 0.2 0.4 0.6 0.8 1.0 0 0 -1 ID - Drain Current (mA) 80 100
Transfer Characteristics
VGS(off) = -4 V VDS = 20 V
TA = -55_C 60 25_C 40
20 125_C
-2
-3
-4
-5
VDS - Drain-Source Voltage (V)
VGS - Gate-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT
J/SST111
VGS(L) RL* ID(on) *Non-inductive -12 V 800 W 12 mA
VDD
J/SST112
-7 V 1600 W 6 mA
J/SST113
-5 V 3200 W 3 mA
RL
OUT
VGS(H) VGS(L)
INPUT PULSE
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VGS Scope
1 kW
51 W
51 W
Document Number: 70232 S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-5
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